FDS6930A
- Mfr.Part #
- FDS6930A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 5,234
- In Stock :
- 5,234
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Factory Lead Time :
- 10 Weeks
- Terminal Finish :
- Tin (Sn)
- Drain Current-Max (Abs) (ID) :
- 4.6A
- Max Power Dissipation :
- 900mW
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Power Dissipation :
- 2W
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 1.5V
- Voltage - Rated DC :
- 30V
- Element Configuration :
- Dual
- FET Feature :
- Logic Level Gate
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 5.5A, 10V
- Continuous Drain Current (ID) :
- 5.5A
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 15V
- Drain to Source Breakdown Voltage :
- 30V
- Number of Elements :
- 2
- Fall Time (Typ) :
- 13 ns
- Transistor Application :
- SWITCHING
- Current Rating :
- 5.5A
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 7nC @ 5V
- Resistance :
- 40mOhm
- Radiation Hardening :
- No
- Number of Pins :
- 8
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- PowerTrench®
- FET Type :
- 2 N-Channel (Dual)
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 187mg
- Turn On Delay Time :
- 5 ns
- Rise Time :
- 8ns
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 17 ns
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Number of Terminations :
- 8
- Transistor Element Material :
- SILICON
- Datasheets
- FDS6930A

FDS6930A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6930A Description
These N-channel logic level MOSFET are manufactured using an advanced PowerTrress process that is customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS6930A Features
5.5 A, 30 V
RDS(ON) = 0.040 Ω @ VGS = 10 V
RDS(ON) = 0.055 Ω @ VGS = 4.5 V.
Fast switching speed.
Low gate charge (typical 5 nC).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
FDS6930A Applications
This product is general usage and suitable for many different applications.
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