FDS6912A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

6A

Turn On Delay Time :

8 ns

Factory Lead Time :

10 Weeks

Turn-Off Delay Time :

23 ns

Max Power Dissipation :

1.6W

Rise Time :

5ns

Lead Free :

Lead Free

FET Type :

2 N-Channel (Dual)

Voltage - Rated DC :

30V

Rds On (Max) @ Id, Vgs :

28m Ω @ 6A, 10V

Termination :

SMD/SMT

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

575pF @ 15V

Current Rating :

6A

JESD-609 Code :

e3

Number of Pins :

8

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Feature :

Logic Level Gate

Threshold Voltage :

1.9V

Dual Supply Voltage :

30V

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

8

Terminal Form :

Gull wing

Width :

4mm

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Dual

Weight :

187mg

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

6A

Series :

PowerTrench®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Pbfree Code :

yes

Number of Elements :

2

Power Dissipation :

1.6W

Fall Time (Typ) :

5 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Radiation Hardening :

No

Published :

2003

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Power - Max :

900mW

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 5V

Resistance :

28mOhm

Length :

5mm

Height :

1.5mm