FDS6911

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Max Power Dissipation :

900mW

Voltage - Rated DC :

20V

Height :

1.575mm

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

1.8 V

Published :

2006

Weight :

187mg

Turn On Delay Time :

9 ns

Mount :

Surface Mount

Width :

3.9mm

Power Dissipation :

1.6W

Number of Elements :

2

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

1130pF @ 15V

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

Series :

PowerTrench®

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Number of Pins :

8

Rise Time :

5ns

Current Rating :

7.5A

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

7.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

20V

Fall Time (Typ) :

5 ns

Drain-source On Resistance-Max :

0.013Ohm

Factory Lead Time :

10 Weeks

Number of Terminations :

8

Turn-Off Delay Time :

26 ns

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Pbfree Code :

yes

ECCN Code :

EAR99

Length :

4.9mm

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

13m Ω @ 7.5A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)