FDS6910

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

FET Type :

2 N-Channel (Dual)

Power - Max :

900mW

Voltage :

30V

Transistor Element Material :

SILICON

Series :

PowerTrench®

Continuous Drain Current (ID) :

7.5A

Vgs(th) (Max) @ Id :

3V @ 250µA

Length :

5mm

Voltage - Rated DC :

30V

Radiation Hardening :

No

Number of Terminations :

8

Current :

75A

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

26 ns

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Lead Free :

Lead Free

Resistance :

13mOhm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Nominal Vgs :

1.8 V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

1130pF @ 15V

Number of Pins :

8

Published :

2004

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Current Rating :

7.5A

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Rds On (Max) @ Id, Vgs :

13m Ω @ 7.5A, 10V

Drain to Source Breakdown Voltage :

30V

Dual Supply Voltage :

30V

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Height :

1.5mm

Threshold Voltage :

1.8V

Number of Elements :

2

Turn On Delay Time :

9 ns

Power Dissipation :

1.6W

Rise Time :

5ns

Pbfree Code :

yes

Max Power Dissipation :

1.6W

REACH SVHC :

No SVHC

Factory Lead Time :

10 Weeks

Width :

4mm

Fall Time (Typ) :

5 ns

JESD-609 Code :

e3

Terminal Form :

Gull wing

ECCN Code :

EAR99