FDS6875
- Mfr.Part #
- FDS6875
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 6
- Stock
- 13,855
- In Stock :
- 13,855
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Rise Time :
- 15ns
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 5V
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 6A
- Number of Elements :
- 2
- Turn On Delay Time :
- 8 ns
- Drain Current-Max (Abs) (ID) :
- 6A
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 2W
- Current Rating :
- -6A
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 6A, 4.5V
- Number of Pins :
- 8
- Radiation Hardening :
- No
- Factory Lead Time :
- 10 Weeks
- Voltage - Rated DC :
- -20V
- FET Type :
- 2 P-Channel (Dual)
- Number of Terminations :
- 8
- FET Feature :
- Logic Level Gate
- Drain to Source Breakdown Voltage :
- -20V
- Drain to Source Voltage (Vdss) :
- 20V
- Power - Max :
- 900mW
- Gate to Source Voltage (Vgs) :
- 8V
- Height :
- 1.5mm
- Width :
- 4mm
- Power Dissipation :
- 2W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Length :
- 5mm
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- PowerTrench®
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- -6A
- Turn-Off Delay Time :
- 98 ns
- Fall Time (Typ) :
- 35 ns
- Weight :
- 187mg
- Element Configuration :
- Dual
- Resistance :
- 30mOhm
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- -800mV
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 10V
- REACH SVHC :
- No SVHC
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Datasheets
- FDS6875

FDS6875 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6875 Description
The MOSFET specified by these P-channel 2.5v is Advanced using ON Semiconductor . The power trench process is tailor-made to minimize on-resistance while maintaining a low gate charge to achieve excellent switching performance.
These devices are ideal for portable electronic applications: load switching and power management, battery charging and protection circuits.
FDS6875 Features
-6A-20VR=0.03 @V=-4.5V
RDsiON)=0.040Ω @Vas=-2.5 V.
Low gate charge (23nC typical)
High performance trench technology for extremely low Rpsionr
High power and current handling capability.
FDS6875 Applications
portable electronic applications
load switching
power management
battery charging
protection circuits
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