FDS2734
- Mfr.Part #
- FDS2734
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 3A 8SOIC
- Stock
- 20,424
- In Stock :
- 20,424
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 8
- Pulsed Drain Current-Max (IDM) :
- 50A
- Turn On Delay Time :
- 23 ns
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 2.5W
- Fall Time (Typ) :
- 11 ns
- Continuous Drain Current (ID) :
- 3A
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Current Rating :
- 3A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Element Configuration :
- Single
- Voltage - Rated DC :
- 250V
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Dual Supply Voltage :
- 250V
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- UltraFET™
- Factory Lead Time :
- 9 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 2610pF @ 100V
- FET Type :
- N-Channel
- JESD-609 Code :
- e4
- Radiation Hardening :
- No
- Nominal Vgs :
- 3 V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Drain Current-Max (Abs) (ID) :
- 3A
- Rise Time :
- 11ns
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Length :
- 4mm
- Weight :
- 130mg
- Height :
- 1.5mm
- Turn-Off Delay Time :
- 40 ns
- Number of Pins :
- 8
- Power Dissipation-Max :
- 2.5W Ta
- Rds On (Max) @ Id, Vgs :
- 117m Ω @ 3A, 10V
- Width :
- 5mm
- Published :
- 2006
- Termination :
- SMD/SMT
- Pbfree Code :
- yes
- Threshold Voltage :
- 3V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 117mOhm
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Drain to Source Breakdown Voltage :
- 250V
- Terminal Position :
- Dual
- Datasheets
- FDS2734

N-Channel Tape & Reel (TR) 117m Ω @ 3A, 10V ±20V 2610pF @ 100V 45nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS2734 Description
FDS2734 is a 250V N-Channel UItraFET Trench? MOSFET. The onsemi single N-Channel MOSFET is produced using an advanced UItraFET Trench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDS2734 is in the SOIC-8 package with 2.5w power dissipation.
FDS2734 Features
-
Max rDS(on) =117mΩ at VGS =10V, ID = 3.0A
-
Max rDS(on) =126mΩ at VGS = 6V, ID = 2.8A
-
Fast switching speed
-
High-performance trench technology for extremely low rDS(on)
-
High power and current handling capability
-
RoHS compliant
FDS2734 Applications
-
Cellular phones
-
Laptop computers
-
Photovoltaic systems
-
Wind turbines
-
Shunt voltage regulator and the series voltage regulator
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