FDS2582
- Mfr.Part #
- FDS2582
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 4.1A 8SOIC
- Stock
- 175,936
- In Stock :
- 175,936
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 2.5W
- Threshold Voltage :
- 4V
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Height :
- 1.5mm
- Power Dissipation-Max :
- 2.5W Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Voltage - Rated DC :
- 150V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Resistance :
- 66mOhm
- Turn-Off Delay Time :
- 36 ns
- RoHS Status :
- ROHS3 Compliant
- Termination :
- SMD/SMT
- Rise Time :
- 19ns
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- 4 V
- Continuous Drain Current (ID) :
- 4.1A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Contact Plating :
- Tin
- JESD-609 Code :
- e4
- Avalanche Energy Rating (Eas) :
- 252 mJ
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Series :
- PowerTrench®
- Rds On (Max) @ Id, Vgs :
- 66m Ω @ 4.1A, 10V
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Width :
- 4mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1290pF @ 25V
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 150V
- Vgs (Max) :
- ±20V
- Current Rating :
- 4.1A
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A Ta
- Weight :
- 130mg
- Terminal Form :
- Gull wing
- Number of Pins :
- 8
- Factory Lead Time :
- 11 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Published :
- 2002
- Dual Supply Voltage :
- 150V
- Turn On Delay Time :
- 11 ns
- Fall Time (Typ) :
- 26 ns
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- Length :
- 5mm
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 8
- Lead Free :
- Lead Free
- Datasheets
- FDS2582
FDS2582 Documents

N-Channel Tape & Reel (TR) 66m Ω @ 4.1A, 10V ±20V 1290pF @ 25V 25nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS2582 Descritption
The FDS2582 is a P-channel MOSFET manufactured by Fairchild Semiconductor using the PowerTrench? technology. It can be used in DC-to-DC converters, off-line UPS systems, and high voltage synchronous rectifier applications.
FDS2582 Features
Low Qrr body diode
Optimized efficiency at high frequencies
UIS Capability (single pulse and repetitive pulse) formerly developmental type 82855
Low miller charge
FDS2582 Applications
Automotive
Power Management
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