FDS2670

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Mfr.Part #
FDS2670
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 200V 3A 8SOIC
Stock
5,145
In Stock :
5,145

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Turn On Delay Time :
13 ns
Number of Pins :
8
Terminal Finish :
Tin (Sn)
Voltage - Rated DC :
200V
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
1228pF @ 100V
Power Dissipation :
2.5W
Packaging :
Tape and Reel (TR)
Current Rating :
3A
Transistor Element Material :
SILICON
Package / Case :
8-SOIC (0.154, 3.90mm Width)
FET Type :
N-Channel
Vgs (Max) :
±20V
Width :
4mm
Factory Lead Time :
6 Weeks
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
130m Ω @ 3A, 10V
Length :
5mm
Mount :
Surface Mount
Rise Time :
8ns
Power Dissipation-Max :
2.5W Ta
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
3A Ta
Resistance :
130mOhm
Series :
PowerTrench®
Weight :
130mg
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Lead Free :
Lead Free
Terminal Form :
Gull wing
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
8
Pbfree Code :
yes
Terminal Position :
Dual
Fall Time (Typ) :
25 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Lifecycle Status :
ACTIVE (Last Updated: 23 hours ago)
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Height :
1.5mm
Continuous Drain Current (ID) :
3A
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
200V
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Number of Elements :
1
Turn-Off Delay Time :
30 ns
Drain Current-Max (Abs) (ID) :
3A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS2670 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:8, FDS2670 pinout, FDS2670 datasheet PDF, FDS2670 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS2670 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS2670


N-Channel Tape & Reel (TR) 130m Ω @ 3A, 10V ±20V 1228pF @ 100V 43nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS2670 Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.


FDS2670 Features

3.0 A, 200 V.  RDS(ON) = 130 m? @ VGS = 10 V

Low gate charge

Fast switching speed

High-performance trench technology for extremely low RDS(ON)

High power and current handling capability


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