FDS2572

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

130mg

Factory Lead Time :

12 Weeks

Length :

5mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Voltage - Rated DC :

150V

Vgs (Max) :

±20V

Power Dissipation-Max :

2.5W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current Rating :

4.9A

Current - Continuous Drain (Id) @ 25°C :

4.9A Tc

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

4V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

47m Ω @ 4.9A, 10V

JESD-609 Code :

e3

Series :

UltraFET™

Pbfree Code :

yes

Turn On Delay Time :

14 ns

Lead Free :

Lead Free

Fall Time (Typ) :

22 ns

Number of Elements :

1

Power Dissipation :

2.5W

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Rise Time :

4ns

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Resistance :

47mOhm

Drain to Source Breakdown Voltage :

150V

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Contact Plating :

Tin

Continuous Drain Current (ID) :

4.9A

Width :

4mm

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Turn-Off Delay Time :

44 ns

Number of Terminations :

8

Number of Pins :

8

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Mounting Type :

Surface Mount

Published :

2001

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Height :

1.5mm