FDS2170N3

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Mfr.Part #
FDS2170N3
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 200V 3A 8SOIC
Stock
4,288
In Stock :
4,288

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Vgs (Max) :
±20V
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Type :
Surface Mount
Drain-source On Resistance-Max :
0.128Ohm
Surface Mount :
yes
Transistor Application :
SWITCHING
Terminal Form :
Gull wing
Terminal Finish :
NICKEL PALLADIUM GOLD
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
260
Series :
PowerTrench®
JESD-609 Code :
e4
Drain to Source Voltage (Vdss) :
200V
Pin Count :
8
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
8
Input Capacitance (Ciss) (Max) @ Vds :
1.292pF @ 100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Terminal Position :
Dual
JESD-30 Code :
R-PDSO-G8
Packaging :
Tape and Reel (TR)
Qualification Status :
COMMERCIAL
Rds On (Max) @ Id, Vgs :
128m Ω @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C :
3A Ta
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Reach Compliance Code :
Unknown
Power Dissipation-Max :
3W Ta
Datasheets
FDS2170N3
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS2170N3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, FDS2170N3 pinout, FDS2170N3 datasheet PDF, FDS2170N3 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS2170N3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS2170N3


N-Channel Tape & Reel (TR) 128m Ω @ 3A, 10V ±20V 1.292pF @ 100V 36nC @ 10V 200V 8-SOIC (0.154, 3.90mm Width)

FDS2170N3 Overview


A device's maximal input capacitance is 1.292pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

FDS2170N3 Features


a 200V drain to source voltage (Vdss)


FDS2170N3 Applications


There are a lot of Rochester Electronics, LLC
FDS2170N3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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