FDS2572
- Mfr.Part #
- FDS2572
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 4
- Stock
- 27,263
- In Stock :
- 27,263
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- Turn-Off Delay Time :
- 44 ns
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- 150V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Fall Time (Typ) :
- 22 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Factory Lead Time :
- 12 Weeks
- Current Rating :
- 4.9A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 4.9A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- UltraFET™
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 2.5W Ta
- Weight :
- 130mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Power Dissipation :
- 2.5W
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 4.9A Tc
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Resistance :
- 47mOhm
- Drain to Source Breakdown Voltage :
- 150V
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Number of Terminations :
- 8
- Height :
- 1.5mm
- Rds On (Max) @ Id, Vgs :
- 47m Ω @ 4.9A, 10V
- Width :
- 4mm
- Threshold Voltage :
- 4V
- Rise Time :
- 4ns
- Turn On Delay Time :
- 14 ns
- Length :
- 5mm
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2001
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDS2572

N-Channel Tape & Reel (TR) 47m Ω @ 4.9A, 10V ±20V 2050pF @ 25V 38nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS2572 Description
With a voltage of 150V, the FDS2572 is an N-channel Power MOSFET transistor from ON Semiconductor. Ultra FET? devices have a unique set of properties that enable them to achieve industry-leading efficiency in power conversion applications. These devices are ideal for high frequency DC to DC converters because they have low Rds(on), low ESR, low total, and Miller gate charge.
FDS2572 Features
-
RDS(ON) = 0.040Ω (Typ.), VGS = 10V
-
Qg(TOT) = 29nC (Typ.), VGS = 10V
-
Low QRR Body Diode
-
Maximized efficiency at high frequencies
-
UIS Rated
FDS2572 Applications
-
This product is general usage and suitable for many different applications.
-
DC/DC Converters
-
Telecom and Data-Com Distributed Power Architectures
-
48-volt I/P Half-bridge/Full-Bridge
-
24-volt Forward and Push-Pull Topologies
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