FDS2572
- Mfr.Part #
- FDS2572
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 4
- Stock
- 27,263
- In Stock :
- 27,263
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 2.5W Ta
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.5mm
- Weight :
- 130mg
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 25V
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 47m Ω @ 4.9A, 10V
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 4.9A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 4.9A Tc
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 44 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Published :
- 2001
- ECCN Code :
- EAR99
- Width :
- 4mm
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Drain to Source Breakdown Voltage :
- 150V
- Power Dissipation :
- 2.5W
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Series :
- UltraFET™
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Threshold Voltage :
- 4V
- Length :
- 5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 22 ns
- Contact Plating :
- Tin
- Factory Lead Time :
- 12 Weeks
- Continuous Drain Current (ID) :
- 4.9A
- Voltage - Rated DC :
- 150V
- Rise Time :
- 4ns
- Turn On Delay Time :
- 14 ns
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Resistance :
- 47mOhm
- Number of Terminations :
- 8
- Datasheets
- FDS2572
FDS2572 Documents

N-Channel Tape & Reel (TR) 47m Ω @ 4.9A, 10V ±20V 2050pF @ 25V 38nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS2572 Description
With a voltage of 150V, the FDS2572 is an N-channel Power MOSFET transistor from ON Semiconductor. Ultra FET? devices have a unique set of properties that enable them to achieve industry-leading efficiency in power conversion applications. These devices are ideal for high frequency DC to DC converters because they have low Rds(on), low ESR, low total, and Miller gate charge.
FDS2572 Features
-
RDS(ON) = 0.040Ω (Typ.), VGS = 10V
-
Qg(TOT) = 29nC (Typ.), VGS = 10V
-
Low QRR Body Diode
-
Maximized efficiency at high frequencies
-
UIS Rated
FDS2572 Applications
-
This product is general usage and suitable for many different applications.
-
DC/DC Converters
-
Telecom and Data-Com Distributed Power Architectures
-
48-volt I/P Half-bridge/Full-Bridge
-
24-volt Forward and Push-Pull Topologies
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