FDP6670AL

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Operating Temperature :

-65°C~175°C TJ

Additional Feature :

LOGIC LEVEL COMPATIBLE

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

240A

Packaging :

Tube

Vgs(th) (Max) @ Id :

3V @ 250µA

Surface Mount :

No

Series :

PowerTrench®

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

80A Ta

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 5V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2.44pF @ 15V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

Not Applicable

Pin Count :

3

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

80A

JEDEC-95 Code :

TO-220AB

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Power Dissipation-Max :

68W Tc

Terminal Finish :

MATTE TIN

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Terminal Position :

Single

Package / Case :

TO-220-3

DS Breakdown Voltage-Min :

30V

Drain-source On Resistance-Max :

0.0065ohm

Avalanche Energy Rating (Eas) :

114 mJ

Operating Mode :

ENHANCEMENT MODE