FDP6030BL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Weight :

1.8g

Input Capacitance (Ciss) (Max) @ Vds :

1160pF @ 15V

Element Configuration :

Single

Fall Time (Typ) :

8 ns

JESD-609 Code :

e3

Number of Terminations :

3

Continuous Drain Current (ID) :

40A

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Voltage - Rated DC :

30V

Packaging :

Tube

Factory Lead Time :

10 Weeks

Package / Case :

TO-220-3

Resistance :

18mOhm

Drain to Source Breakdown Voltage :

30V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

18m Ω @ 20A, 10V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Width :

4.83mm

Turn On Delay Time :

9 ns

Length :

10.67mm

Power Dissipation :

60W

ECCN Code :

EAR99

Published :

2000

Operating Temperature :

-65°C~175°C TJ

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

11ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

40A

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

60W Tc

Number of Pins :

3

Height :

9.4mm

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Number of Elements :

1

Series :

PowerTrench®

Pbfree Code :

yes

Turn-Off Delay Time :

23 ns

Vgs (Max) :

±20V