FDP61N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

5V

Power Dissipation-Max :

417W Tc

Width :

4.83mm

JEDEC-95 Code :

TO-220AB

Length :

10.67mm

Published :

2013

FET Type :

N-Channel

Continuous Drain Current (ID) :

6.1A

Factory Lead Time :

7 Weeks

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Vgs (Max) :

±30V

Voltage :

200V

Fall Time (Typ) :

170 ns

REACH SVHC :

No SVHC

JESD-609 Code :

e3

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

3380pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

3

Additional Feature :

FAST SWITCHING

Lead Free :

Lead Free

Package / Case :

TO-220-3

Power Dissipation :

417W

Resistance :

41mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

200V

Current :

61A

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

41m Ω @ 30.5A, 10V

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Voltage - Rated DC :

200V

Element Configuration :

Single

Weight :

4.535924g

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Number of Elements :

1

Mounting Type :

Through Hole

Packaging :

Tube

Series :

UniFET™

Height :

9.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

40 ns

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Application :

SWITCHING

Rise Time :

215ns

Turn-Off Delay Time :

125 ns

Gate to Source Voltage (Vgs) :

30V

Current Rating :

61A