FDP6030BL
- Mfr.Part #
- FDP6030BL
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 4
- Stock
- 6,690
- In Stock :
- 6,690
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Resistance :
- 18mOhm
- FET Type :
- N-Channel
- Turn On Delay Time :
- 9 ns
- Current Rating :
- 40A
- Mounting Type :
- Through Hole
- Width :
- 4.83mm
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation-Max :
- 60W Tc
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 23 ns
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Published :
- 2000
- Weight :
- 1.8g
- ECCN Code :
- EAR99
- Series :
- PowerTrench®
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 40A
- Fall Time (Typ) :
- 8 ns
- Voltage - Rated DC :
- 30V
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- Operating Temperature :
- -65°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 5V
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 10 Weeks
- Pbfree Code :
- yes
- Rise Time :
- 11ns
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 20A, 10V
- Number of Pins :
- 3
- Packaging :
- Tube
- Height :
- 9.4mm
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Power Dissipation :
- 60W
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 10.67mm
- Package / Case :
- TO-220-3
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1160pF @ 15V
- Drain to Source Breakdown Voltage :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- FDP6030BL

N-Channel Tube 18m Ω @ 20A, 10V ±20V 1160pF @ 15V 17nC @ 5V TO-220-3
FDP6030BL Description
With either synchronous or traditional switching PWM controllers, this N-Channel Logic Level MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. These MOSFETs switch more quickly and have lower gate charges than other MOSFETs with comparable RDS(on) parameters, leading to more efficient DC/DC power supply systems.
FDP6030BL Features
? 40 A, 30 V; RDS(ON) = 0.018 at 10 V; RDS(ON) = 0.024 at 4.5 V.
? At high temperatures, critical DC electrical parameters are provided.
? A tough internal source-drain diode can replace the need for an external transient suppressor for Zener diodes.
? Extremely low RDS with high performance trench technology (ON).
? Maximum junction temperature rating: 175 °C.
FDP6030BL Applications
Switching applications
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