FDP61N20
- Mfr.Part #
- FDP61N20
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 6
- Stock
- 7,374
- In Stock :
- 7,374
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 125 ns
- Turn On Delay Time :
- 40 ns
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Current :
- 61A
- Height :
- 9.4mm
- Width :
- 4.83mm
- Voltage - Rated DC :
- 200V
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3380pF @ 25V
- Factory Lead Time :
- 7 Weeks
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Series :
- UniFET™
- Rise Time :
- 215ns
- Voltage :
- 200V
- Power Dissipation :
- 417W
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- ECCN Code :
- EAR99
- Weight :
- 4.535924g
- Current - Continuous Drain (Id) @ 25°C :
- 61A Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 2013
- Additional Feature :
- FAST SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 170 ns
- Rds On (Max) @ Id, Vgs :
- 41m Ω @ 30.5A, 10V
- Drain to Source Breakdown Voltage :
- 200V
- JEDEC-95 Code :
- TO-220AB
- Vgs (Max) :
- ±30V
- Transistor Element Material :
- SILICON
- Length :
- 10.67mm
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 10V
- Threshold Voltage :
- 5V
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 6.1A
- Element Configuration :
- Single
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Power Dissipation-Max :
- 417W Tc
- Current Rating :
- 61A
- Resistance :
- 41mOhm
- Datasheets
- FDP61N20
FDP61N20 Documents

N-Channel Tube 41m Ω @ 30.5A, 10V ±30V 3380pF @ 25V 75nC @ 10V TO-220-3
FDP61N20 Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDP61N20 Features
RDS(on) = 34 m? (Typ.) @ VGS = 10 V, ID = 30.5 A
Low Gate Charge (Typ. 58 nC)
Low Cross (Typ. 80 pF)
100% Avalanche Tested
FDP61N20 Applications
PDP TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
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