FDP6670AL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

DS Breakdown Voltage-Min :

30V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

Not Applicable

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

2.44pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Power Dissipation-Max :

68W Tc

Package / Case :

TO-220-3

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Operating Temperature :

-65°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tube

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

80A

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

114 mJ

Pulsed Drain Current-Max (IDM) :

240A

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.0065ohm

Current - Continuous Drain (Id) @ 25°C :

80A Ta

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Qualification Status :

COMMERCIAL

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 40A, 10V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No