FDFMA2P853T
- Mfr.Part #
- FDFMA2P853T
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 6-UDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3A MICROFET
- Stock
- 32,850
- In Stock :
- 32,850
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 6
- Input Capacitance (Ciss) (Max) @ Vds :
- 435pF @ 10V
- Series :
- PowerTrench®
- DS Breakdown Voltage-Min :
- 20V
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 4.5V
- Package / Case :
- 6-UDFN Exposed Pad
- Pbfree Code :
- yes
- Surface Mount :
- yes
- JESD-30 Code :
- S-PDSO-C6
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±8V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- JESD-609 Code :
- e4
- Terminal Position :
- Dual
- FET Feature :
- Schottky Diode (Isolated)
- Power Dissipation-Max :
- 1.4W Ta
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 1.3V @ 250µA
- Peak Reflow Temperature (Cel) :
- 260
- Pulsed Drain Current-Max (IDM) :
- 6A
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 3A, 4.5V
- Terminal Form :
- C BEND
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 20V
- Drain-source On Resistance-Max :
- 0.12Ohm
- FET Type :
- P-Channel
- Pin Count :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Datasheets
- FDFMA2P853T
FDFMA2P853T Documents

P-Channel Tape & Reel (TR) 120m Ω @ 3A, 4.5V ±8V 435pF @ 10V 6nC @ 4.5V 20V 6-UDFN Exposed Pad
FDFMA2P853T Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 435pF @ 10V.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 6A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 20V in order to maintain normal operation.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
FDFMA2P853T Features
based on its rated peak drain current 6A.
a 20V drain to source voltage (Vdss)
FDFMA2P853T Applications
There are a lot of Rochester Electronics, LLC
FDFMA2P853T applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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