FDFM2P110

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e4

FET Feature :

Schottky Diode (Isolated)

Rise Time :

12ns

Element Configuration :

Single

JEDEC-95 Code :

MO-229WEEA

Width :

3mm

Factory Lead Time :

16 Weeks

Resistance :

140mOhm

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Vgs (Max) :

±12V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

140m Ω @ 3.5A, 4.5V

Voltage - Rated DC :

-20V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

3.5A

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 10V

ECCN Code :

EAR99

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Turn-Off Delay Time :

11 ns

Series :

PowerTrench®

Current Rating :

-3.5A

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2W

Length :

3mm

Height :

750μm

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Package / Case :

6-WDFN Exposed Pad

Collector Emitter Breakdown Voltage :

20V

Weight :

9mg

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Turn On Delay Time :

8 ns

Power Dissipation-Max :

2W Ta

Terminal Finish :

Nickel/Palladium (Ni/Pd)

Fall Time (Typ) :

3.2 ns

Number of Terminations :

6

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-20V

Number of Pins :

6

Gate to Source Voltage (Vgs) :

12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V