FDFMA2P853T

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 10V

Package / Case :

6-UDFN Exposed Pad

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

FET Type :

P-Channel

Vgs (Max) :

±8V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Rds On (Max) @ Id, Vgs :

120m Ω @ 3A, 4.5V

JESD-30 Code :

S-PDSO-C6

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.3V @ 250µA

DS Breakdown Voltage-Min :

20V

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

C BEND

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

Surface Mount :

yes

JESD-609 Code :

e4

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Series :

PowerTrench®

Drain-source On Resistance-Max :

0.12Ohm

FET Feature :

Schottky Diode (Isolated)

Pulsed Drain Current-Max (IDM) :

6A

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Transistor Application :

SWITCHING

Terminal Finish :

NICKEL PALLADIUM GOLD

Power Dissipation-Max :

1.4W Ta