FDFM2N111

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Mfr.Part #
FDFM2N111
Manufacturer
onsemi
Package / Case
6-WDFN Exposed Pad
Datasheet
Download
Description
MOSFET N-CH 20V 4A MICROFET
Stock
13,055
In Stock :
13,055

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
Mount :
Surface Mount
Element Configuration :
Single
Factory Lead Time :
16 Weeks
Power Dissipation :
1.7W
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
JESD-609 Code :
e4
Series :
PowerTrench®
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
100m Ω @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs :
3.8nC @ 4.5V
Height :
750μm
Length :
3mm
Turn On Delay Time :
6 ns
Width :
3mm
Fall Time (Typ) :
7 ns
Pbfree Code :
yes
Weight :
165.33333mg
Operating Mode :
ENHANCEMENT MODE
Drain Current-Max (Abs) (ID) :
4A
Voltage - Rated DC :
20V
ECCN Code :
EAR99
Power Dissipation-Max :
1.7W Ta
Vgs (Max) :
±12V
Terminal Position :
Dual
Collector Emitter Breakdown Voltage :
2V
Number of Pins :
6
Package / Case :
6-WDFN Exposed Pad
Turn-Off Delay Time :
11 ns
Number of Elements :
1
Rise Time :
7ns
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Number of Terminations :
6
Current Rating :
4A
Input Capacitance (Ciss) (Max) @ Vds :
273pF @ 10V
FET Feature :
Schottky Diode (Isolated)
Continuous Drain Current (ID) :
4A
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Gate to Source Voltage (Vgs) :
12V
Current - Continuous Drain (Id) @ 25°C :
4A Ta
Vgs(th) (Max) @ Id :
1.5V @ 250µA
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Terminal Finish :
Nickel/Palladium (Ni/Pd)
Datasheets
FDFM2N111
Introducing Transistors - FETs, MOSFETs - Single onsemi FDFM2N111 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:6, Package / Case:6-WDFN Exposed Pad, Number of Terminations:6, Operating Temperature:-55°C~150°C TJ, FDFM2N111 pinout, FDFM2N111 datasheet PDF, FDFM2N111 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDFM2N111 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDFM2N111


N-Channel Tape & Reel (TR) 100m Ω @ 4A, 4.5V ±12V 273pF @ 10V 3.8nC @ 4.5V 6-WDFN Exposed Pad

FDFM2N111 Overview


The maximum input capacitance of this device is 273pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 4A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.As shown in the table below, the drain current of this device is 4A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 11 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 6 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.

FDFM2N111 Features


a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 11 ns


FDFM2N111 Applications


There are a lot of ON Semiconductor
FDFM2N111 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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