FDFMA2N028Z
- Mfr.Part #
- FDFMA2N028Z
- Manufacturer
- onsemi
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 3.7A 6MICROFET
- Stock
- 3,154
- In Stock :
- 3,154
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 8 ns
- Vgs (Max) :
- ±12V
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 20V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Resistance :
- 68mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 455pF @ 10V
- Length :
- 2mm
- Turn-Off Delay Time :
- 14 ns
- Factory Lead Time :
- 16 Weeks
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Package / Case :
- 6-VDFN Exposed Pad
- Threshold Voltage :
- 1V
- Rds On (Max) @ Id, Vgs :
- 68m Ω @ 3.7A, 4.5V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Lead Free :
- Lead Free
- Rise Time :
- 8ns
- Gate to Source Voltage (Vgs) :
- 12V
- Height :
- 750μm
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- FET Feature :
- Schottky Diode (Isolated)
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 4.5V
- JESD-609 Code :
- e4
- Mount :
- Surface Mount
- Number of Terminations :
- 6
- Pbfree Code :
- yes
- Power Dissipation :
- 1.4W
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Number of Pins :
- 6
- Current Rating :
- 3.7A
- Power Dissipation-Max :
- 1.4W Tj
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 3.7A
- Current - Continuous Drain (Id) @ 25°C :
- 3.7A Ta
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Width :
- 2mm
- Series :
- PowerTrench®
- Feedback Cap-Max (Crss) :
- 90 pF
- Weight :
- 60mg
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 8 ns
- FET Type :
- N-Channel
- Terminal Position :
- Dual
- Datasheets
- FDFMA2N028Z

N-Channel Tape & Reel (TR) 68m Ω @ 3.7A, 4.5V ±12V 455pF @ 10V 6nC @ 4.5V 6-VDFN Exposed Pad
FDFMA2N028Z Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 455pF @ 10V.This device has a continuous drain current (ID) of [3.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=20V, the drain-source breakdown voltage is 20V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 14 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
FDFMA2N028Z Features
a continuous drain current (ID) of 3.7A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 14 ns
a threshold voltage of 1V
FDFMA2N028Z Applications
There are a lot of ON Semiconductor
FDFMA2N028Z applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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