FDFMA2P853
- Mfr.Part #
- FDFMA2P853
- Manufacturer
- onsemi
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3A 6MICROFET
- Stock
- 8,272
- In Stock :
- 8,272
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Continuous Drain Current (ID) :
- 3A
- Number of Terminations :
- 6
- Gate to Source Voltage (Vgs) :
- 8V
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 16 Weeks
- Package / Case :
- 6-VDFN Exposed Pad
- Power Dissipation-Max :
- 1.4W Ta
- Fall Time (Typ) :
- 11 ns
- Length :
- 2mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 435pF @ 10V
- Drain to Source Breakdown Voltage :
- 20V
- Terminal Position :
- Dual
- Turn On Delay Time :
- 9 ns
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Number of Elements :
- 1
- JEDEC-95 Code :
- MO-229VCCC
- Rise Time :
- 11ns
- Width :
- 2mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 3A, 4.5V
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- FET Feature :
- Schottky Diode (Isolated)
- Height :
- 750μm
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 4.5V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Resistance :
- 120mOhm
- FET Type :
- P-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Vgs (Max) :
- ±8V
- Drain Current-Max (Abs) (ID) :
- 2.2A
- Vgs(th) (Max) @ Id :
- 1.3V @ 250µA
- Collector Emitter Breakdown Voltage :
- 2V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.4W
- Pbfree Code :
- yes
- Number of Pins :
- 6
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 15 ns
- Weight :
- 40mg
- Mount :
- Surface Mount
- JESD-609 Code :
- e4
- Transistor Application :
- SWITCHING
- Series :
- PowerTrench®
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDFMA2P853

P-Channel Tape & Reel (TR) 120m Ω @ 3A, 4.5V ±8V 435pF @ 10V 6nC @ 4.5V 6-VDFN Exposed Pad
FDFMA2P853 Description
This FDFMA2P853 is designed specifically as a single package solution for the battery charge switch in cellular handsets and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage Schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
FDFMA2P853 Features
-
-3.0 A, -20V.
-
RDS(ON) = 120 mΩ @ VGS = -4.5 V
-
RDS(ON) = 160 mΩ @ VGS = -2.5 V
-
RDS(ON) = 240 mΩ @ VGS = -1.8 V
-
VF < 0.46 V @ 500 mA
-
Low Profile - 0.8 mm maximun - in the new packageMicroFET 2x2 mm
-
RoHS Compliant
FDFMA2P853 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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