FDD3860

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

7 ns

Power Dissipation :

3.1W

Continuous Drain Current (ID) :

6.2A

Transistor Application :

SWITCHING

Power Dissipation-Max :

3.1W Ta 69W Tc

Element Configuration :

Single

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

36m Ω @ 5.9A, 10V

Pbfree Code :

yes

Number of Elements :

1

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Weight :

260.37mg

Turn On Delay Time :

16 ns

Factory Lead Time :

8 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1740pF @ 50V

Number of Pins :

3

Published :

2006

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

PowerTrench®

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Rise Time :

10ns

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

3.8V

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Width :

6.22mm

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

6.2A Ta

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Drain Current-Max (Abs) (ID) :

42A

Resistance :

36mOhm

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Contact Plating :

Tin

Length :

6.73mm

Pulsed Drain Current-Max (IDM) :

60A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

24 ns

Height :

2.39mm

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ