FDD3682

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Termination :

SMD/SMT

Current Rating :

32A

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

95W Tc

Avalanche Energy Rating (Eas) :

55 mJ

Number of Terminations :

2

Pbfree Code :

yes

Rise Time :

46ns

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta 32A Tc

Fall Time (Typ) :

26 ns

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

36m Ω @ 32A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Continuous Drain Current (ID) :

32A

Dual Supply Voltage :

100V

Terminal Form :

Gull wing

Mount :

Surface Mount

Lead Free :

Lead Free

Voltage - Rated DC :

100V

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 hours ago)

Height :

2.39mm

Length :

6.73mm

JESD-609 Code :

e3

Turn-Off Delay Time :

24 ns

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Series :

PowerTrench®

Drain Current-Max (Abs) (ID) :

5.5A

Power Dissipation :

95W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Resistance :

36mOhm

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Width :

6.22mm

JEDEC-95 Code :

TO-252AA

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 25V

Weight :

260.37mg

Nominal Vgs :

4 V

Transistor Element Material :

SILICON

Turn On Delay Time :

9 ns

Threshold Voltage :

4V

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99