FDD3680
- Mfr.Part #
- FDD3680
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 2
- Stock
- 2,060
- In Stock :
- 2,060
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 68W
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 68W Ta
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 25A
- Fall Time (Typ) :
- 21 ns
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 63 ns
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 26A
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Factory Lead Time :
- 8 Weeks
- Series :
- PowerTrench®
- Turn On Delay Time :
- 14 ns
- Rds On (Max) @ Id, Vgs :
- 46m Ω @ 6.1A, 10V
- Rise Time :
- 8.5ns
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Current Rating :
- 25A
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1735pF @ 50V
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- 100V
- Avalanche Energy Rating (Eas) :
- 245 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 53nC @ 10V
- Voltage - Rated DC :
- 100V
- Number of Terminations :
- 2
- Resistance :
- 46mOhm
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 25A Ta
- Transistor Application :
- SWITCHING
- Weight :
- 260.37mg
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Datasheets
- FDD3680

N-Channel Tape & Reel (TR) 46m Ω @ 6.1A, 10V ±20V 1735pF @ 50V 53nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
The FDD3680 N-Channel MOSFET has been designed with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. These FDD3680 MOSFETs have a lower gate charge and faster switching than MOSFETs with comparable RDS(ON) parameters. As a result, driving the FDD3680 MOSFET is easier and safer (even at very high frequencies), and DC/DC power supply systems are more efficient overall.
FDD3680 Features
25 A, 100 V.
RDS(ON) = 46 mΩ @ VGS = 10 V
RDS(ON) = 51 mΩ @ VGS = 6 V
Low gate charge (38 nC typical)
Fast switching speed
High performance trench technology for extremely RDS(ON)
High power and current handling capability
FDD3680 Applications
FDD3680 is employed as voltage-variable resistors (WRs) in operational amplifiers (op-amps), tone controls, and logic circuits, as well as for mixer operation on FM and TV receivers.
High-speed power switching
Low drive current
Suitable for motor control, switching regulator and DC-DC converter
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