FDD3680

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

26A

Element Configuration :

Single

Number of Elements :

1

Voltage - Rated DC :

100V

Transistor Element Material :

SILICON

Power Dissipation :

68W

Weight :

260.37mg

Vgs (Max) :

±20V

Turn-Off Delay Time :

63 ns

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

100V

Transistor Application :

SWITCHING

Current Rating :

25A

Radiation Hardening :

No

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1735pF @ 50V

Current - Continuous Drain (Id) @ 25°C :

25A Ta

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

21 ns

Series :

PowerTrench®

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

245 mJ

ECCN Code :

EAR99

Number of Pins :

3

Rise Time :

8.5ns

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Continuous Drain Current (ID) :

25A

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

14 ns

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

46m Ω @ 6.1A, 10V

Resistance :

46mOhm

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

68W Ta