FDC6432SH

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 15V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Terminal Form :

Gull wing

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 1mA

Series :

PowerTrench®, SyncFET™

FET Type :

N and P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.09Ohm

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V 12V

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

30V

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

2.4A 2.5A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 5V

JESD-30 Code :

R-PDSO-G6

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

2.4A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

FET Feature :

Logic Level Gate

Power - Max :

700mW

Terminal Finish :

MATTE TIN