FDC608PZ
- Mfr.Part #
- FDC608PZ
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 5.8A SUPERSOT6
- Stock
- 326,820
- In Stock :
- 326,820
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 5.8A Ta
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Turn On Delay Time :
- 13 ns
- Continuous Drain Current (ID) :
- 5.8A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1330pF @ 10V
- Element Configuration :
- Single
- Termination :
- SMD/SMT
- Vgs (Max) :
- ±12V
- Turn-Off Delay Time :
- 91 ns
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 8ns
- Current Rating :
- -5.8A
- Dual Supply Voltage :
- -20V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 6
- Voltage - Rated DC :
- -20V
- Drain to Source Breakdown Voltage :
- -20V
- Height :
- 1mm
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 13 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 4.5V
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation-Max :
- 1.6W Ta
- Pulsed Drain Current-Max (IDM) :
- 20A
- Pbfree Code :
- yes
- Weight :
- 36mg
- Radiation Hardening :
- No
- Threshold Voltage :
- -1V
- Terminal Position :
- Dual
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 8 ns
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Published :
- 2006
- Number of Terminations :
- 6
- Power Dissipation :
- 1.6W
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Mount :
- Surface Mount
- Width :
- 1.7mm
- Length :
- 3mm
- Drain to Source Voltage (Vdss) :
- 20V
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Nominal Vgs :
- -1 V
- Resistance :
- 30mOhm
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 12V
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 5.8A, 4.5V
- FET Type :
- P-Channel
- Datasheets
- FDC608PZ

P-Channel Tape & Reel (TR) 30m Ω @ 5.8A, 4.5V ±12V 1330pF @ 10V 23nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6
FDC608PZ Description
The FDC608PZ P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.
FDC608PZ Features
-
Low Gate Charge
-
High performance trench technology for extremely low RDS(ON)
-
Turn-Off Delay Time: 91 ns
-
ROHS3 Compliant
-
No SVHC
-
Lead Free
-
SuperSOTTM–6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick)
FDC608PZ Applications
-
Load switching and power management
-
Battery power circuits
-
DC/DC conversions
-
Electronics devices
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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