FDC608PZ

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Mfr.Part #
FDC608PZ
Manufacturer
onsemi
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET P-CH 20V 5.8A SUPERSOT6
Stock
326,820
In Stock :
326,820

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
5.8A Ta
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Turn On Delay Time :
13 ns
Continuous Drain Current (ID) :
5.8A
Input Capacitance (Ciss) (Max) @ Vds :
1330pF @ 10V
Element Configuration :
Single
Termination :
SMD/SMT
Vgs (Max) :
±12V
Turn-Off Delay Time :
91 ns
Packaging :
Tape and Reel (TR)
Rise Time :
8ns
Current Rating :
-5.8A
Dual Supply Voltage :
-20V
Transistor Element Material :
SILICON
Number of Pins :
6
Voltage - Rated DC :
-20V
Drain to Source Breakdown Voltage :
-20V
Height :
1mm
REACH SVHC :
No SVHC
Factory Lead Time :
13 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 4.5V
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Power Dissipation-Max :
1.6W Ta
Pulsed Drain Current-Max (IDM) :
20A
Pbfree Code :
yes
Weight :
36mg
Radiation Hardening :
No
Threshold Voltage :
-1V
Terminal Position :
Dual
Series :
PowerTrench®
Mounting Type :
Surface Mount
Fall Time (Typ) :
8 ns
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Published :
2006
Number of Terminations :
6
Power Dissipation :
1.6W
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Mount :
Surface Mount
Width :
1.7mm
Length :
3mm
Drain to Source Voltage (Vdss) :
20V
JESD-609 Code :
e3
Contact Plating :
Tin
Nominal Vgs :
-1 V
Resistance :
30mOhm
Terminal Form :
Gull wing
Gate to Source Voltage (Vgs) :
12V
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Rds On (Max) @ Id, Vgs :
30m Ω @ 5.8A, 4.5V
FET Type :
P-Channel
Datasheets
FDC608PZ
Introducing Transistors - FETs, MOSFETs - Single onsemi FDC608PZ from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Mounting Type:Surface Mount, Number of Terminations:6, Package / Case:SOT-23-6 Thin, TSOT-23-6, Operating Temperature:-55°C~150°C TJ, FDC608PZ pinout, FDC608PZ datasheet PDF, FDC608PZ amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDC608PZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDC608PZ


P-Channel Tape & Reel (TR) 30m Ω @ 5.8A, 4.5V ±12V 1330pF @ 10V 23nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6

FDC608PZ Description


The FDC608PZ P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.



FDC608PZ Features


  • Low Gate Charge

  • High performance trench technology for extremely low RDS(ON)

  • Turn-Off Delay Time: 91 ns

  • ROHS3 Compliant

  • No SVHC

  • Lead Free

  • SuperSOTTM–6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick)



FDC608PZ Applications


  • Load switching and power management

  • Battery power circuits

  • DC/DC conversions

  • Electronics devices

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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