FDC610PZ
- Mfr.Part #
- FDC610PZ
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 4.9A SUPERSOT6
- Stock
- 3,564
- In Stock :
- 3,564
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Turn-Off Delay Time :
- 33 ns
- Number of Pins :
- 6
- Continuous Drain Current (ID) :
- 4.9mA
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 6
- Drain Current-Max (Abs) (ID) :
- 4.9A
- Mount :
- Surface Mount
- Number of Channels :
- 1
- Max Junction Temperature (Tj) :
- 150°C
- Weight :
- 36mg
- REACH SVHC :
- No SVHC
- Height :
- 1.1mm
- Power Dissipation :
- 1.6W
- Transistor Element Material :
- SILICON
- Rise Time :
- 4ns
- Turn On Delay Time :
- 7 ns
- RoHS Status :
- ROHS3 Compliant
- Series :
- PowerTrench®
- Drain to Source Voltage (Vdss) :
- 30V
- Vgs (Max) :
- ±25V
- Power Dissipation-Max :
- 1.6W Ta
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drain to Source Breakdown Voltage :
- -30V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Published :
- 2006
- Factory Lead Time :
- 13 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Width :
- 1.7mm
- Drain-source On Resistance-Max :
- 0.042Ohm
- Threshold Voltage :
- -2.2V
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 4.9A Ta
- Gate to Source Voltage (Vgs) :
- 25V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- P-Channel
- Contact Plating :
- Tin
- Fall Time (Typ) :
- 4 ns
- Rds On (Max) @ Id, Vgs :
- 42m Ω @ 4.9A, 10V
- Length :
- 3mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1005pF @ 15V
- Mounting Type :
- Surface Mount
- Datasheets
- FDC610PZ

P-Channel Tape & Reel (TR) 42m Ω @ 4.9A, 10V ±25V 1005pF @ 15V 24nC @ 10V 30V SOT-23-6 Thin, TSOT-23-6
FDC610PZ Description
This P-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications: load switching and power management, battery charging
circuits, and DC/DC conversion.
FDC610PZ Features
Max rDS(on) = 42m? at VGS = –10V, ID = –4.9A
?Max rDS(on) = 75m? at VGS = –4.5V, ID = –3.7A
?Low gate charge (17nC typical).
?High performance trench technology for extremely low rDS(on).
?SuperSOTTM –6 package: small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
?RoHS Compliant
FDC610PZ Applications
DC - DC Conversion
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
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