FDC608PZ-F171
- Mfr.Part #
- FDC608PZ-F171
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- FDC608PZ - P-CHANNEL POWERTRENCH
- Stock
- 681,149
- In Stock :
- 681,149
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- Manufacturer :
- onsemi
- Product Category :
- Specialized ICs
- JESD-30 Code :
- R-PDSO-G6
- Supplier Device Package :
- SuperSOT™-6
- Brand Name :
- ON Semiconductor
- Channel Type :
- P
- FET Feature :
- -
- Drive Voltage (Max Rds On, Min Rds On) :
- 2.5V, 4.5V
- Number of Terminals :
- 6
- Reach Compliance Code :
- Compliant
- Power Dissipation :
- 1.6
- Surface Mount :
- yes
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Drain-source On Resistance-Max :
- 0.03 Ω
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Manufacturer :
- ON Semiconductor
- Rds On (Max) @ Id, Vgs :
- 30mOhm @ 5.8A, 4.5V
- Polarity/Channel Type :
- P-Channel
- Technology :
- MOSFET (Metal Oxide)
- Pbfree Code :
- yes
- Power Dissipation (Max) :
- 800mW (Ta)
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package :
- Bulk
- Transistor Element Material :
- SILICON
- Continuous Drain Current Id :
- 5.8
- Drain to Source Voltage (Vdss) :
- 20 V
- Power Dissipation-Max (Abs) :
- 1.6 W
- Gate Charge (Qg) (Max) @ Vgs :
- 23 nC @ 4.5 V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1330 pF @ 10 V
- Terminal Form :
- Gull wing
- Manufacturer Lifecycle Status :
- ACTIVE (Last Updated: 2 years ago)
- Series :
- *
- Current - Continuous Drain (Id) @ 25°C :
- 5.8A (Ta)
- RoHS :
- Compliant
- DS Breakdown Voltage-Min :
- 20 V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Package Shape :
- RECTANGULAR
- Lifecycle Status :
- Production (Last Updated: 2 years ago)
- Factory Lead Time :
- 1 Week
- FET Type :
- P-Channel
- Vgs (Max) :
- ±12V
- Product Status :
- Active
- Datasheets
- FDC608PZ-F171
Specialized ICs onsemi FDC608PZ-F171 Overview
The Specialized ICs onsemi FDC608PZ-F171 is a high-performance P-Channel MOSFET optimized for low gate charge, low on-resistance, and high-speed switching. This MOSFET is designed to handle a drain to source voltage (Vdss) of 20V, and features a low threshold voltage of 4.5V, making it ideal for battery-operated applications. With a maximum gate capacitance of 1330 pF at 10V, it ensures efficient power management in complex circuits. Its SOT-23-6 packaging is engineered for minimal space usage while providing adequate heat dissipation, crucial for maintaining stability and extending operational life. Suitable for low voltage applications, this MOSFET remains robust under extended periods of operation, maintaining a resistance of just 30mOhm at 5.8A.
Specialized ICs onsemi FDC608PZ-F171 Key Features
A 20V drain-source voltage (Vdss) ensures safe operation under typical circuit conditions, with an enhanced ability to handle sudden voltage spikes. A low Rds(on) of 30mOhm at 5.8A enhances its efficiency by reducing power loss. Gate charge is minimized to improve switching performance without sacrificing reliability. Furthermore, its compact SOT-23-6 package makes it a favorable choice for dense PCB layouts, where space saving is a priority.
Specialized ICs onsemi FDC608PZ-F171 Applications
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supplies
- Synchronous Rectification
- Battery Protection Circuit
- Telecom Server Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages, and resonant switching
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