FDC6420C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Number of Channels :

2

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

324pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Weight :

36mg

Number of Pins :

6

Rise Time :

12ns

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Number of Elements :

2

Series :

PowerTrench®

Power Dissipation :

960mW

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 4.5V

Max Power Dissipation :

700mW

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

10 Weeks

Radiation Hardening :

No

Threshold Voltage :

900mV

Drain Current-Max (Abs) (ID) :

3A

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

3A 2.2A

Fall Time (Typ) :

12 ns

Nominal Vgs :

900 mV

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Published :

2017

Termination :

SMD/SMT

Terminal Form :

Gull wing

Element Configuration :

Dual

Dual Supply Voltage :

20V

Number of Terminations :

6

Continuous Drain Current (ID) :

3A

Operating Temperature :

-55°C~150°C TJ

Resistance :

70mOhm

Mounting Type :

Surface Mount

ECCN Code :

EAR99

FET Type :

N and P-Channel

Turn-Off Delay Time :

10 ns

Current Rating :

3A

REACH SVHC :

No SVHC

Mount :

Surface Mount

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

20V

Gate to Source Voltage (Vgs) :

12V

FET Feature :

Logic Level Gate

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Rds On (Max) @ Id, Vgs :

70m Ω @ 3A, 4.5V

Height :

900μm

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1.5V @ 250µA