FDC6333C
- Mfr.Part #
- FDC6333C
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N/P-CH 30V 2.5A/2A SSOT6
- Stock
- 203
- In Stock :
- 203
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N and P-Channel
- Rds On (Max) @ Id, Vgs :
- 95m Ω @ 2.5A, 10V
- JESD-609 Code :
- e3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 6.6nC @ 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Dual
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Factory Lead Time :
- 10 Weeks
- Max Junction Temperature (Tj) :
- 150°C
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- -30V
- Series :
- PowerTrench®
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Form :
- Gull wing
- Number of Channels :
- 2
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Width :
- 1.7mm
- Number of Terminations :
- 6
- Turn-Off Delay Time :
- 11 ns
- Threshold Voltage :
- 1.8V
- Weight :
- 36mg
- FET Feature :
- Logic Level Gate
- Height :
- 1mm
- Resistance :
- 95mOhm
- Power Dissipation :
- 960mW
- Current Rating :
- 2.5A
- Power - Max :
- 700mW
- Fall Time (Typ) :
- 13 ns
- Drain to Source Voltage (Vdss) :
- 30V
- Rise Time :
- 13ns
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Number of Elements :
- 2
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A 2A
- Published :
- 2017
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 4.5 ns
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 25V
- Continuous Drain Current (ID) :
- 2.5A
- Input Capacitance (Ciss) (Max) @ Vds :
- 282pF @ 15V
- Operating Temperature :
- -55°C~150°C TJ
- Nominal Vgs :
- 1.8 V
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 960mW
- Length :
- 3mm
- Number of Pins :
- 6
- Datasheets
- FDC6333C

FDC6333C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDC6333C Description
The FDC6333C is an N/P-channel MOSFET produced using an advanced PowerTrench? process. The Onsemi FDC6333C has been specially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. The MOSFET FDC6333C is suitable for use with DC-to-DC converter, load switch, and LCD display inverter applications. The FDC6333C is offered in the SOT-23-3 package. It is specified for operation from –55°C to +150°C.
FDC6333C Features
-
Q1 2.5 A, 30V
-
RDS(on) = 95 mΩ@ VGS = 10 V
-
RDS(on) = 150 mΩ @ VGS = 4.5 V
-
Q2 –2.0 A, 30V.
-
RDS(on) = 150 mΩ@ VGS = -10 V
-
RDS(on) = 220 mΩ @ VGS = -4.5 V
-
Low gate charge
-
High-performance trench technology for extremely low RDS(ON)
-
SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).
FDC6333C Applications
-
Industrial
-
Power Management
-
DC/DC converter
-
Load switch
-
LCD display inverter
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