FDC6327C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

3mm

Factory Lead Time :

10 Weeks

Current Rating :

2.7A

Continuous Drain Current (ID) :

1.9A

Terminal Form :

Gull wing

Max Power Dissipation :

960mW

Packaging :

Tape and Reel (TR)

Weight :

36mg

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Application :

SWITCHING

Number of Terminations :

6

Nominal Vgs :

900 mV

FET Type :

N and P-Channel

Number of Channels :

2

Rise Time :

14ns

Published :

2000

Number of Elements :

2

Resistance :

80mOhm

REACH SVHC :

No SVHC

Termination :

SMD/SMT

Threshold Voltage :

900mV

Power - Max :

700mW

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Width :

1.7mm

Series :

PowerTrench®

Max Junction Temperature (Tj) :

150°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rds On (Max) @ Id, Vgs :

80m Ω @ 2.7A, 4.5V

Turn-Off Delay Time :

14 ns

Current - Continuous Drain (Id) @ 25°C :

2.7A 1.9A

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 4.5V

Drain to Source Breakdown Voltage :

20V

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Number of Pins :

6

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Height :

1.1mm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

960mW