FDC6320C
- Mfr.Part #
- FDC6320C
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 61,098
- In Stock :
- 61,098
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Dual Supply Voltage :
- 25V
- Number of Terminations :
- 6
- Gate to Source Voltage (Vgs) :
- 8V
- Continuous Drain Current (ID) :
- 220mA
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 900mW
- Element Configuration :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 220mA 120mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 9.5pF @ 10V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Operating Mode :
- ENHANCEMENT MODE
- Max Power Dissipation :
- 700mW
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Threshold Voltage :
- 850mV
- Fall Time (Typ) :
- 6 ns
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- FET Feature :
- Logic Level Gate
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Number of Pins :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 220mA
- Factory Lead Time :
- 10 Weeks
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- 25V
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 7.4 ns
- Termination :
- SMD/SMT
- Rise Time :
- 6ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Elements :
- 2
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 0.4nC @ 4.5V
- Published :
- 1997
- Nominal Vgs :
- 850 mV
- FET Type :
- N and P-Channel
- Weight :
- 36mg
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- JESD-609 Code :
- e3
- Resistance :
- 4Ohm
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 4 Ω @ 400mA, 4.5V
- Datasheets
- FDC6320C

FDC6320C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDC6320C Description
These dual Numbp channel logic level enhanced mode field effect transistors are produced using proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize on-resistance. The device is an improved design, which is especially suitable for low voltage applications as an alternative to bipolar digital transistors in load switching applications. Because there is no need for bias resistors, this dual digital FET can replace multiple digital transistors with different bias resistors.
FDC6320C Features
N-Ch 25 V, 0.22 A, RDS(ON) = 5 |? @ VGS= 2.7 V.
P-Ch 25 V, -0.12 A, RDS(ON) = 13 |? @ VGS= -2.7 V.
Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) < 1.5 V.
Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
Replace NPN & PNP digital transistors.
FDC6320C Applications
This product is general usage and suitable for many different applications.
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