FDC6320C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

REACH SVHC :

No SVHC

Resistance :

4Ohm

Max Power Dissipation :

700mW

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Current Rating :

220mA

Published :

1997

Current - Continuous Drain (Id) @ 25°C :

220mA 120mA

FET Type :

N and P-Channel

Factory Lead Time :

10 Weeks

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

7.4 ns

Dual Supply Voltage :

25V

Fall Time (Typ) :

6 ns

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

Mount :

Surface Mount

Continuous Drain Current (ID) :

220mA

Terminal Form :

Gull wing

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Termination :

SMD/SMT

Drain to Source Breakdown Voltage :

25V

Rds On (Max) @ Id, Vgs :

4 Ω @ 400mA, 4.5V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

JESD-609 Code :

e3

Weight :

36mg

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Elements :

2

Threshold Voltage :

850mV

Terminal Finish :

Tin (Sn)

Power Dissipation :

900mW

Gate to Source Voltage (Vgs) :

8V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rise Time :

6ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Number of Terminations :

6

Number of Pins :

6

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Transistor Element Material :

SILICON

Nominal Vgs :

850 mV