FDC6318P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

960mW

Threshold Voltage :

-700mV

Width :

1.7mm

Series :

PowerTrench®

Lead Free :

Lead Free

Resistance :

90mOhm

Number of Channels :

2

Fall Time (Typ) :

14 ns

Max Junction Temperature (Tj) :

150°C

Number of Elements :

2

Drain to Source Breakdown Voltage :

-12V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

21 ns

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Nominal Vgs :

700 mV

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Radiation Hardening :

No

FET Type :

2 P-Channel (Dual)

Factory Lead Time :

10 Weeks

Element Configuration :

Dual

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Length :

3mm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mount :

Surface Mount

Turn On Delay Time :

9 ns

Number of Pins :

6

Height :

1.1mm

Mounting Type :

Surface Mount

Published :

2001

JESD-609 Code :

e3

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 6V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-12V

Operating Temperature :

-55°C~150°C TJ

Termination :

SMD/SMT

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Finish :

Tin (Sn)

Rise Time :

14ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

8V

Continuous Drain Current (ID) :

-2.5A

Max Power Dissipation :

960mW

Weight :

36mg

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Dual Supply Voltage :

12V

Current Rating :

-2.5A

Number of Terminations :

6

Power - Max :

700mW

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.5A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

2.5A