FDC6312P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Number of Terminations :

6

Drain to Source Breakdown Voltage :

-20V

Power - Max :

700mW

Published :

2001

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Length :

3mm

Power Dissipation :

960mW

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

13 ns

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 4.5V

Number of Elements :

2

Pbfree Code :

yes

Rise Time :

13ns

Max Junction Temperature (Tj) :

150°C

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

Current Rating :

-2.3A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

467pF @ 10V

Dual Supply Voltage :

-20V

Nominal Vgs :

-900 mV

Mount :

Surface Mount

Threshold Voltage :

-900mV

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

115m Ω @ 2.3A, 4.5V

FET Type :

2 P-Channel (Dual)

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

-20V

Max Power Dissipation :

960mW

Continuous Drain Current (ID) :

2.3A

Turn-Off Delay Time :

18 ns

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Height :

1.1mm

Number of Pins :

6

Turn On Delay Time :

8 ns

Factory Lead Time :

10 Weeks

FET Feature :

Logic Level Gate

Package / Case :

SOT-23-6 Thin, TSOT-23-6

ECCN Code :

EAR99

Width :

1.7mm

Number of Channels :

2

Terminal Finish :

Tin (Sn)

Series :

PowerTrench®

Resistance :

115mOhm

Weight :

36mg

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Termination :

SMD/SMT