FDC6305N
- Mfr.Part #
- FDC6305N
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET 2N-CH 20V 2.7A SSOT6
- Stock
- 330,664
- In Stock :
- 330,664
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- FET Type :
- 2 N-Channel (Dual)
- Resistance :
- 80mOhm
- Transistor Element Material :
- SILICON
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- PowerTrench®
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 310pF @ 10V
- Drain to Source Breakdown Voltage :
- 20V
- Height :
- 1.1mm
- Number of Elements :
- 2
- Turn-Off Delay Time :
- 11 ns
- Fall Time (Typ) :
- 8.5 ns
- Current Rating :
- 2.7A
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 4.5V
- Element Configuration :
- Dual
- Voltage - Rated DC :
- 20V
- Weight :
- 36mg
- Number of Terminations :
- 6
- Gate to Source Voltage (Vgs) :
- 8V
- Rise Time :
- 8.5ns
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Number of Channels :
- 2
- FET Feature :
- Standard
- Width :
- 1.7mm
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Dual Supply Voltage :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 2.7A
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Threshold Voltage :
- 900mV
- Turn On Delay Time :
- 5 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Published :
- 1999
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Factory Lead Time :
- 10 Weeks
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Number of Pins :
- 6
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 960mW
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 2.7A, 4.5V
- Power Dissipation :
- 900mW
- Max Junction Temperature (Tj) :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 700mW
- Radiation Hardening :
- No
- Length :
- 3mm
- Datasheets
- FDC6305N
FDC6305N Documents

FDC6305N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDC6305N Description
These N-channel low threshold 2.5V specify that the MOSFET is manufactured using an advanced PowerTritch process tailored to minimize on-resistance while maintaining low gate charge for excellent switching performance.
FDC6305N Features
2.7 A, 20 V
RDS(on) = 0.08|? @ VGS = 4.5V
RDS(on) = 0.12|? @ VGS = 2.5V
Low gate charge (3.5nC typical)
Fast switching speed
High performance trench technology for extremelylow RDS(ON)
SuperSOT? -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick)
FDC6305N Applications
This product is general usage and suitable for many different applications.
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