FDC6304P

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Mfr.Part #
FDC6304P
Manufacturer
Fairchild Semiconductor
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Stock
6,172
In Stock :
6,172

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Arrays
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
10 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
6
Voltage - Rated DC :
-25V
Turn-Off Delay Time :
55 ns
Lead Free :
Lead Free
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Mount :
Surface Mount
JESD-609 Code :
e3
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Pbfree Code :
yes
Fall Time (Typ) :
8 ns
Resistance :
1.1Ohm
Number of Elements :
2
Rise Time :
8ns
FET Feature :
Logic Level Gate
Continuous Drain Current (ID) :
-460mA
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
460mA
Weight :
36mg
FET Type :
2 P-Channel (Dual)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
62pF @ 10V
Threshold Voltage :
-860mV
Element Configuration :
Dual
Gate Charge (Qg) (Max) @ Vgs :
1.5nC @ 4.5V
ECCN Code :
EAR99
Turn On Delay Time :
7 ns
Number of Terminations :
6
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Drain to Source Breakdown Voltage :
-25V
Terminal Finish :
Tin (Sn)
Current Rating :
-460mA
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 500mA, 4.5V
Transistor Application :
SWITCHING
Power Dissipation :
900mW
Radiation Hardening :
No
Drain to Source Voltage (Vdss) :
25V
Max Power Dissipation :
700mW
REACH SVHC :
No SVHC
Gate to Source Voltage (Vgs) :
8V
Operating Temperature :
-55°C~150°C TJ
Datasheets
FDC6304P
Introducing Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FDC6304P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Package / Case:SOT-23-6 Thin, TSOT-23-6, Mounting Type:Surface Mount, Number of Terminations:6, Operating Temperature:-55°C~150°C TJ, FDC6304P pinout, FDC6304P datasheet PDF, FDC6304P amp .Beyond Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FDC6304P ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDC6304P


FDC6304P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDC6304P           Description

 

These P-channel enhanced mode field effect transistors are produced using on Semiconductor's proprietary high cell density. DMOS technology. This very high-density process is tailor-made to minimize on-resistance under low gate driving conditions. The device is designed for battery-powered applications such as laptops and mobile phones. The device has excellent on-resistance even at a gate drive voltage as low as 2.5 volts.

 

FDC6304P        Features


-25V.-0.46 Acontinuous-1.0APeak.   RpsiON=1.5|?@Vas=-2.7V RD8ION=1.1|?@Vas=-4.5V.

Very low level gate drive requirements allowing direc! operation in 3V circuits. Vcs<1.5V. Gate-Source Zener for ESD ruggedness.>6kV Human Body Model.

 

FDC6304P          Applications


battery-powered applications

 





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