FDC6304P
- Mfr.Part #
- FDC6304P
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 6,172
- In Stock :
- 6,172
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 10 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 6
- Voltage - Rated DC :
- -25V
- Turn-Off Delay Time :
- 55 ns
- Lead Free :
- Lead Free
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 8 ns
- Resistance :
- 1.1Ohm
- Number of Elements :
- 2
- Rise Time :
- 8ns
- FET Feature :
- Logic Level Gate
- Continuous Drain Current (ID) :
- -460mA
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 460mA
- Weight :
- 36mg
- FET Type :
- 2 P-Channel (Dual)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 62pF @ 10V
- Threshold Voltage :
- -860mV
- Element Configuration :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 1.5nC @ 4.5V
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 7 ns
- Number of Terminations :
- 6
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Drain to Source Breakdown Voltage :
- -25V
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- -460mA
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 500mA, 4.5V
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 900mW
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 25V
- Max Power Dissipation :
- 700mW
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 8V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDC6304P

FDC6304P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDC6304P Description
These P-channel enhanced mode field effect transistors are produced using on Semiconductor's proprietary high cell density. DMOS technology. This very high-density process is tailor-made to minimize on-resistance under low gate driving conditions. The device is designed for battery-powered applications such as laptops and mobile phones. The device has excellent on-resistance even at a gate drive voltage as low as 2.5 volts.
FDC6304P Features
-25V.-0.46 Acontinuous-1.0APeak. RpsiON=1.5|?@Vas=-2.7V RD8ION=1.1|?@Vas=-4.5V.
Very low level gate drive requirements allowing direc! operation in 3V circuits. Vcs<1.5V. Gate-Source Zener for ESD ruggedness.>6kV Human Body Model.
FDC6304P Applications
battery-powered applications
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