FDB6690S
- Mfr.Part #
- FDB6690S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 42A TO263AB
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Terminal Finish :
- NOT SPECIFIED
- Power Dissipation-Max :
- 48W Tc
- Qualification Status :
- COMMERCIAL
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.238pF @ 15V
- JESD-30 Code :
- R-PSSO-G2
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.0155Ohm
- Pulsed Drain Current-Max (IDM) :
- 140A
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 42A Ta
- Drain to Source Voltage (Vdss) :
- 30V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Series :
- PowerTrench®, SyncFET™
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 140 mJ
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 15.5m Ω @ 21A, 10V
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 30V
- Drain Current-Max (Abs) (ID) :
- 42A
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 5V
- Datasheets
- FDB6690S

N-Channel Tape & Reel (TR) 15.5m Ω @ 21A, 10V ±20V 1.238pF @ 15V 15nC @ 5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB6690S Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 140 mJ.A device's maximal input capacitance is 1.238pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 42A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 140A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
FDB6690S Features
the avalanche energy rating (Eas) is 140 mJ
based on its rated peak drain current 140A.
a 30V drain to source voltage (Vdss)
FDB6690S Applications
There are a lot of Rochester Electronics, LLC
FDB6690S applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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