FDB6030BL

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Mfr.Part #
FDB6030BL
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 30V 40A R-6
Stock
26,677
In Stock :
26,677

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Case Connection :
DRAIN
Series :
PowerTrench®
Configuration :
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds :
1.16pF @ 15V
Mounting Type :
Surface Mount
Terminal Position :
Single
FET Type :
N-Channel
DS Breakdown Voltage-Min :
30V
Avalanche Energy Rating (Eas) :
150 mJ
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
260
Pbfree Code :
yes
Number of Terminations :
2
Qualification Status :
COMMERCIAL
Rds On (Max) @ Id, Vgs :
18m Ω @ 20A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain Current-Max (Abs) (ID) :
40A
Vgs(th) (Max) @ Id :
3V @ 250µA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Drain-source On Resistance-Max :
0.018Ohm
Drain to Source Voltage (Vdss) :
30V
JESD-30 Code :
R-PSSO-G2
Power Dissipation-Max :
60W Tc
Terminal Finish :
MATTE TIN
Surface Mount :
yes
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 5V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-65°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Pin Count :
3
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Pulsed Drain Current-Max (IDM) :
120A
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Introducing Transistors - FETs, MOSFETs - Single onsemi FDB6030BL from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-65°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, FDB6030BL pinout, FDB6030BL datasheet PDF, FDB6030BL amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB6030BL ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDB6030BL


N-Channel Tape & Reel (TR) 18m Ω @ 20A, 10V ±20V 1.16pF @ 15V 17nC @ 5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB6030BL Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 150 mJ.A device's maximal input capacitance is 1.16pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 40A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 120A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

FDB6030BL Features


the avalanche energy rating (Eas) is 150 mJ
based on its rated peak drain current 120A.
a 30V drain to source voltage (Vdss)


FDB6030BL Applications


There are a lot of Rochester Electronics, LLC
FDB6030BL applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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