FDB6030BL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Number of Elements :

1

DS Breakdown Voltage-Min :

30V

Drain-source On Resistance-Max :

0.018Ohm

Drain to Source Voltage (Vdss) :

30V

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

120A

Pin Count :

3

Power Dissipation-Max :

60W Tc

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

40A

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

18m Ω @ 20A, 10V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

150 mJ

Operating Temperature :

-65°C~175°C TJ

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Series :

PowerTrench®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1.16pF @ 15V