FDB6670AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 1mA

Power Dissipation-Max :

62.5W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0085Ohm

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

30V

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

62A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

62A Ta

Terminal Finish :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

4

Terminal Position :

Single

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 15V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 31A, 10V

Series :

PowerTrench®

Pulsed Drain Current-Max (IDM) :

150A

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

30V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1.57pF @ 15V

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V