FDB6035L

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

175A

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.011Ohm

Drain Current-Max (Abs) (ID) :

58A

Moisture Sensitivity Level (MSL) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Number of Terminals :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

JEDEC-95 Code :

TO-263AB

Surface Mount :

yes

Case Connection :

DRAIN

Additional Feature :

LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (Eas) :

150 mJ

Number of Elements :

1

Terminal Finish :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes