FDB6035L

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

Case Connection :

DRAIN

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-263AB

Number of Terminals :

2

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

175A

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

58A

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

150 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.011Ohm

Moisture Sensitivity Level (MSL) :

NOT SPECIFIED

Additional Feature :

LOGIC LEVEL COMPATIBLE