FDB6021P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

28A Ta

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.03Ohm

Vgs (Max) :

±8V

Terminal Finish :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

37W Tc

DS Breakdown Voltage-Min :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Current-Max (Abs) (ID) :

28A

Rds On (Max) @ Id, Vgs :

30m Ω @ 14A, 4.5V

Operating Temperature :

-65°C~175°C TJ

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

80A

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

Series :

PowerTrench®

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1.89pF @ 10V

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Terminal Position :

Single

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)