FDB6670AL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

Series :

PowerTrench®

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.0065ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

68W Tc

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 40A, 10V

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Number of Elements :

1

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 5V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

DS Breakdown Voltage-Min :

30V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

80A

Pin Count :

4

Pulsed Drain Current-Max (IDM) :

240A

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

80A Ta

Pbfree Code :

yes

Surface Mount :

yes

FET Type :

N-Channel

Number of Terminations :

2

Operating Temperature :

-65°C~175°C TJ

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2.44pF @ 15V

Avalanche Energy Rating (Eas) :

114 mJ