FDA28N50F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

20.1mm

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

6.401g

Turn-Off Delay Time :

192 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

HTS Code :

8541.29.00.95

Number of Pins :

3

Turn On Delay Time :

67 ns

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

112A

Series :

UniFET™

Radiation Hardening :

No

Vgs (Max) :

±30V

JESD-609 Code :

e3

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Lead Free :

Lead Free

Continuous Drain Current (ID) :

28A

Rise Time :

137ns

Drain to Source Breakdown Voltage :

500V

ECCN Code :

EAR99

Published :

2013

Package / Case :

TO-3P-3, SC-65-3

Length :

15.8mm

Drain-source On Resistance-Max :

0.175Ohm

Input Capacitance (Ciss) (Max) @ Vds :

5387pF @ 25V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

175m Ω @ 14A, 10V

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Mount :

Through Hole

Number of Elements :

1

Power Dissipation :

310W

Factory Lead Time :

12 Weeks

Pbfree Code :

yes

Width :

5mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

310W Tc

Fall Time (Typ) :

101 ns

Operating Mode :

ENHANCEMENT MODE