FDA28N50F
- Mfr.Part #
- FDA28N50F
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 28A TO3PN
- Stock
- 229
- In Stock :
- 229
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- UniFET™
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Published :
- 2013
- Gate Charge (Qg) (Max) @ Vgs :
- 105nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Drain-source On Resistance-Max :
- 0.175Ohm
- Mounting Type :
- Through Hole
- Weight :
- 6.401g
- Length :
- 15.8mm
- Number of Elements :
- 1
- Element Configuration :
- Single
- Number of Pins :
- 3
- Width :
- 5mm
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 12 Weeks
- Turn-Off Delay Time :
- 192 ns
- Continuous Drain Current (ID) :
- 28A
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 175m Ω @ 14A, 10V
- Pulsed Drain Current-Max (IDM) :
- 112A
- Drain to Source Breakdown Voltage :
- 500V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 67 ns
- Power Dissipation-Max :
- 310W Tc
- Fall Time (Typ) :
- 101 ns
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-3P-3, SC-65-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 5387pF @ 25V
- Power Dissipation :
- 310W
- Height :
- 20.1mm
- Radiation Hardening :
- No
- Rise Time :
- 137ns
- Packaging :
- Tube
- HTS Code :
- 8541.29.00.95
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Datasheets
- FDA28N50F

N-Channel Tube 175m Ω @ 14A, 10V ±30V 5387pF @ 25V 105nC @ 10V TO-3P-3, SC-65-3
FDA28N50F Description
UniFETTM MOSFETs are a type of high-voltage MOSFET that uses planar stripe and DMOS technology. The FDA28N50F MOSFET has been designed to have lower on-state resistance, improved switching performance, and a larger avalanche energy strength. UniFET FRFET? MOSFET reverse recovery performance has been improved by lifetime control in the body diode. It has a trr of less than 100nsec and a reverse dv/dt immunity of 15V/ns, whereas standard planar MOSFETs have a trr of more than 200nsec and a reverse dv/dt immunity of 4.5V/nsec, respectively. As a result, in some situations where the performance of the MOSFET's body diode is critical, it can eliminate an additional component and increase system reliability. The FDA28N50F is ideal for power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
FDA28N50F Features
-
RoHS compliant
-
Low Crss ( Typ. 38pF)
-
100% avalanche tested
-
Improved dv/dt capability
-
Low gate charge ( Typ. 80nC)
-
RDS(on) = 140m? ( Typ.)@ VGS = 10V, ID = 14A
FDA28N50F Applications
-
PDP TV
-
AC-DC power supply
-
Uninterruptible power supply
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