FDA20N50F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

45 ns

Power Dissipation-Max :

388W Tc

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Power Dissipation :

388W

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Length :

15.8mm

Drain to Source Breakdown Voltage :

500V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

100 ns

Package / Case :

TO-3P-3, SC-65-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

22A Tc

ECCN Code :

EAR99

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

88A

Fall Time (Typ) :

60 ns

Number of Terminations :

3

Mounting Type :

Through Hole

Weight :

6.401g

Transistor Element Material :

SILICON

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Resistance :

260mOhm

Contact Plating :

Tin

Width :

5mm

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

260m Ω @ 11A, 10V

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Rise Time :

120ns

Radiation Hardening :

No

Continuous Drain Current (ID) :

22A

Height :

20.1mm

Series :

UniFET™

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Vgs (Max) :

±30V

Published :

2013

Number of Elements :

1

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3390pF @ 25V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

2