FDA20N50F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Drain to Source Breakdown Voltage :

500V

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Radiation Hardening :

No

Number of Elements :

1

Turn-Off Delay Time :

100 ns

Weight :

6.401g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Package / Case :

TO-3P-3, SC-65-3

FET Type :

N-Channel

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rise Time :

120ns

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Contact Plating :

Tin

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

88A

Element Configuration :

Single

Pbfree Code :

yes

Power Dissipation-Max :

388W Tc

Published :

2013

Turn On Delay Time :

45 ns

Length :

15.8mm

Input Capacitance (Ciss) (Max) @ Vds :

3390pF @ 25V

JESD-30 Code :

R-PSFM-T3

Series :

UniFET™

Mounting Type :

Through Hole

Width :

5mm

RoHS Status :

ROHS3 Compliant

Number of Pins :

2

Number of Terminations :

3

Power Dissipation :

388W

Height :

20.1mm

Lead Free :

Lead Free

Fall Time (Typ) :

60 ns

Resistance :

260mOhm

Continuous Drain Current (ID) :

22A

Rds On (Max) @ Id, Vgs :

260m Ω @ 11A, 10V