FDA20N50F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Fall Time (Typ) :

60 ns

Continuous Drain Current (ID) :

22A

Turn On Delay Time :

45 ns

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Length :

15.8mm

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Width :

5mm

RoHS Status :

ROHS3 Compliant

Published :

2013

Turn-Off Delay Time :

100 ns

Radiation Hardening :

No

Weight :

6.401g

Rds On (Max) @ Id, Vgs :

260m Ω @ 11A, 10V

JESD-609 Code :

e3

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Number of Terminations :

3

Package / Case :

TO-3P-3, SC-65-3

Power Dissipation :

388W

Resistance :

260mOhm

Series :

UniFET™

Pbfree Code :

yes

Factory Lead Time :

4 Weeks

JESD-30 Code :

R-PSFM-T3

Drain to Source Breakdown Voltage :

500V

Pulsed Drain Current-Max (IDM) :

88A

Vgs (Max) :

±30V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

20.1mm

Input Capacitance (Ciss) (Max) @ Vds :

3390pF @ 25V

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Rise Time :

120ns

Power Dissipation-Max :

388W Tc

Transistor Application :

SWITCHING

FET Type :

N-Channel

Number of Pins :

2

Mount :

Through Hole

Lead Free :

Lead Free