FDA24N40F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

4 Weeks

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Power Dissipation-Max :

235W Tc

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Published :

2013

Power Dissipation :

235W

Turn-Off Delay Time :

120 ns

Width :

5mm

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

190m Ω @ 11.5A, 10V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Rise Time :

92ns

Turn On Delay Time :

40 ns

Length :

16.2mm

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

3

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Threshold Voltage :

3V

Number of Pins :

3

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

3030pF @ 25V

Package / Case :

TO-3P-3, SC-65-3

Continuous Drain Current (ID) :

23A

Weight :

6.401g

ECCN Code :

EAR99

Mounting Type :

Through Hole

Series :

UniFET™

Fall Time (Typ) :

75 ns

Height :

20.1mm

FET Type :

N-Channel

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Pulsed Drain Current-Max (IDM) :

92A

Drain to Source Breakdown Voltage :

400V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistance :

190mOhm