FDA24N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

REACH SVHC :

No SVHC

Height :

20.1mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Fall Time (Typ) :

86 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

270W Tc

Turn-Off Delay Time :

164 ns

Mounting Type :

Through Hole

Series :

UniFET™

Element Configuration :

Single

Package / Case :

TO-3P-3, SC-65-3

Input Capacitance (Ciss) (Max) @ Vds :

4150pF @ 25V

Width :

5mm

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Resistance :

190mOhm

Threshold Voltage :

5V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

30V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

96A

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Number of Elements :

1

Transistor Application :

SWITCHING

Weight :

6.401g

Rise Time :

108ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

270W

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

190m Ω @ 12A, 10V

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

15.8mm

Continuous Drain Current (ID) :

24A

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Mount :

Through Hole

ECCN Code :

EAR99

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

47 ns

Factory Lead Time :

4 Weeks

Number of Pins :

2

Lead Free :

Lead Free

Vgs (Max) :

±30V

Published :

2013

Drain to Source Breakdown Voltage :

500V