FDA20N50
- Mfr.Part #
- FDA20N50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A TO3PN
- Stock
- 2,316
- In Stock :
- 2,316
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 15.8mm
- Turn-Off Delay Time :
- 100 ns
- Element Configuration :
- Single
- Power Dissipation :
- 388W
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 22A
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 260m Ω @ 11A, 10V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Power Dissipation-Max :
- 388W Tc
- Factory Lead Time :
- 4 Weeks
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 3390pF @ 25V
- Resistance :
- 260mOhm
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Weight :
- 6.401g
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 500V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 60 ns
- Turn On Delay Time :
- 45 ns
- Width :
- 5mm
- Height :
- 20.1mm
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-3P-3, SC-65-3
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Pins :
- 2
- Packaging :
- Tube
- Rise Time :
- 120ns
- Pulsed Drain Current-Max (IDM) :
- 88A
- Published :
- 2013
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Series :
- UniFET™
- Datasheets
- FDA20N50

N-Channel Tube 260m Ω @ 11A, 10V ±30V 3390pF @ 25V 65nC @ 10V TO-3P-3, SC-65-3
FDA20N50F Description
FDA20N50F is an N-channel power MOSFET based on planar stripe and DMOS technology. The MOSFET FDA20N50F is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET? MOSFET has been enhanced by lifetime control. Therefore, it can remove the additional components and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. The FDA20N50F is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDA20N50F Features
-
Ros(on)= 220 ms (Typ.) @ VGs= 10V,lp=11A
-
Low Gate Charge (Typ. 50 nC)
-
Low Crss (Typ. 27 pF)
-
100% Avalanche Tested
-
Improved dv/dt Capability
-
RoHS Compliant
FDA20N50F Applications
-
PDP TV
-
Uninterruptible Power Supply
-
AC-DC Power Supply
-
power factor correction (PFC), flat panel display (FPD) TV power, ATX
-
electronic lamp ballasts.
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