FDA20N50
- Mfr.Part #
- FDA20N50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A TO3PN
- Stock
- 2,316
- In Stock :
- 2,316
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 260m Ω @ 11A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Series :
- UniFET™
- Transistor Application :
- SWITCHING
- Published :
- 2013
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 388W Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3390pF @ 25V
- Length :
- 15.8mm
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Number of Pins :
- 2
- Width :
- 5mm
- Factory Lead Time :
- 4 Weeks
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Weight :
- 6.401g
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 100 ns
- Power Dissipation :
- 388W
- JESD-609 Code :
- e3
- Rise Time :
- 120ns
- Contact Plating :
- Tin
- Resistance :
- 260mOhm
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-3P-3, SC-65-3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain to Source Breakdown Voltage :
- 500V
- Continuous Drain Current (ID) :
- 22A
- Fall Time (Typ) :
- 60 ns
- Pulsed Drain Current-Max (IDM) :
- 88A
- Height :
- 20.1mm
- Turn On Delay Time :
- 45 ns
- Number of Terminations :
- 3
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDA20N50

N-Channel Tube 260m Ω @ 11A, 10V ±30V 3390pF @ 25V 65nC @ 10V TO-3P-3, SC-65-3
FDA20N50F Description
FDA20N50F is an N-channel power MOSFET based on planar stripe and DMOS technology. The MOSFET FDA20N50F is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET? MOSFET has been enhanced by lifetime control. Therefore, it can remove the additional components and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. The FDA20N50F is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDA20N50F Features
-
Ros(on)= 220 ms (Typ.) @ VGs= 10V,lp=11A
-
Low Gate Charge (Typ. 50 nC)
-
Low Crss (Typ. 27 pF)
-
100% Avalanche Tested
-
Improved dv/dt Capability
-
RoHS Compliant
FDA20N50F Applications
-
PDP TV
-
Uninterruptible Power Supply
-
AC-DC Power Supply
-
power factor correction (PFC), flat panel display (FPD) TV power, ATX
-
electronic lamp ballasts.
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