FDA20N50
- Mfr.Part #
- FDA20N50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A TO3PN
- Stock
- 2,316
- In Stock :
- 2,316
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Contact Plating :
- Tin
- JESD-30 Code :
- R-PSFM-T3
- Number of Pins :
- 2
- Vgs (Max) :
- ±30V
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Resistance :
- 260mOhm
- Pulsed Drain Current-Max (IDM) :
- 88A
- Rise Time :
- 120ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3390pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 260m Ω @ 11A, 10V
- Factory Lead Time :
- 4 Weeks
- Weight :
- 6.401g
- Height :
- 20.1mm
- Published :
- 2013
- Power Dissipation-Max :
- 388W Tc
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Turn On Delay Time :
- 45 ns
- Drain to Source Breakdown Voltage :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Transistor Element Material :
- SILICON
- Width :
- 5mm
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 22A
- Packaging :
- Tube
- Package / Case :
- TO-3P-3, SC-65-3
- Turn-Off Delay Time :
- 100 ns
- Fall Time (Typ) :
- 60 ns
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Power Dissipation :
- 388W
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Series :
- UniFET™
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Length :
- 15.8mm
- Datasheets
- FDA20N50

N-Channel Tube 260m Ω @ 11A, 10V ±30V 3390pF @ 25V 65nC @ 10V TO-3P-3, SC-65-3
FDA20N50F Description
FDA20N50F is an N-channel power MOSFET based on planar stripe and DMOS technology. The MOSFET FDA20N50F is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET? MOSFET has been enhanced by lifetime control. Therefore, it can remove the additional components and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. The FDA20N50F is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDA20N50F Features
-
Ros(on)= 220 ms (Typ.) @ VGs= 10V,lp=11A
-
Low Gate Charge (Typ. 50 nC)
-
Low Crss (Typ. 27 pF)
-
100% Avalanche Tested
-
Improved dv/dt Capability
-
RoHS Compliant
FDA20N50F Applications
-
PDP TV
-
Uninterruptible Power Supply
-
AC-DC Power Supply
-
power factor correction (PFC), flat panel display (FPD) TV power, ATX
-
electronic lamp ballasts.
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