FDA20N50
- Mfr.Part #
- FDA20N50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A TO3PN
- Stock
- 2,316
- In Stock :
- 2,316
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Height :
- 20.1mm
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- JESD-30 Code :
- R-PSFM-T3
- Number of Pins :
- 2
- Width :
- 5mm
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3390pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 260m Ω @ 11A, 10V
- Power Dissipation-Max :
- 388W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 88A
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-3P-3, SC-65-3
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 500V
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Number of Terminations :
- 3
- Published :
- 2013
- Length :
- 15.8mm
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±30V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 100 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 388W
- Element Configuration :
- Single
- Rise Time :
- 120ns
- Continuous Drain Current (ID) :
- 22A
- Turn On Delay Time :
- 45 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Factory Lead Time :
- 4 Weeks
- Weight :
- 6.401g
- Series :
- UniFET™
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Mount :
- Through Hole
- Fall Time (Typ) :
- 60 ns
- Packaging :
- Tube
- Pbfree Code :
- yes
- Resistance :
- 260mOhm
- Datasheets
- FDA20N50

N-Channel Tube 260m Ω @ 11A, 10V ±30V 3390pF @ 25V 65nC @ 10V TO-3P-3, SC-65-3
FDA20N50F Description
FDA20N50F is an N-channel power MOSFET based on planar stripe and DMOS technology. The MOSFET FDA20N50F is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET? MOSFET has been enhanced by lifetime control. Therefore, it can remove the additional components and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. The FDA20N50F is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDA20N50F Features
-
Ros(on)= 220 ms (Typ.) @ VGs= 10V,lp=11A
-
Low Gate Charge (Typ. 50 nC)
-
Low Crss (Typ. 27 pF)
-
100% Avalanche Tested
-
Improved dv/dt Capability
-
RoHS Compliant
FDA20N50F Applications
-
PDP TV
-
Uninterruptible Power Supply
-
AC-DC Power Supply
-
power factor correction (PFC), flat panel display (FPD) TV power, ATX
-
electronic lamp ballasts.
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