FDA20N50
- Mfr.Part #
- FDA20N50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A TO3PN
- Stock
- 2,316
- In Stock :
- 2,316
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-3P-3, SC-65-3
- Factory Lead Time :
- 4 Weeks
- JESD-30 Code :
- R-PSFM-T3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Elements :
- 1
- Series :
- UniFET™
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Rise Time :
- 120ns
- Number of Terminations :
- 3
- Power Dissipation :
- 388W
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 5mm
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 100 ns
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 45 ns
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 88A
- Drain to Source Breakdown Voltage :
- 500V
- Weight :
- 6.401g
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 22A
- Length :
- 15.8mm
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 3390pF @ 25V
- Resistance :
- 260mOhm
- Height :
- 20.1mm
- Fall Time (Typ) :
- 60 ns
- Number of Pins :
- 2
- Rds On (Max) @ Id, Vgs :
- 260m Ω @ 11A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 388W Tc
- Published :
- 2013
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- ECCN Code :
- EAR99
- Datasheets
- FDA20N50

N-Channel Tube 260m Ω @ 11A, 10V ±30V 3390pF @ 25V 65nC @ 10V TO-3P-3, SC-65-3
FDA20N50F Description
FDA20N50F is an N-channel power MOSFET based on planar stripe and DMOS technology. The MOSFET FDA20N50F is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET? MOSFET has been enhanced by lifetime control. Therefore, it can remove the additional components and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. The FDA20N50F is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDA20N50F Features
-
Ros(on)= 220 ms (Typ.) @ VGs= 10V,lp=11A
-
Low Gate Charge (Typ. 50 nC)
-
Low Crss (Typ. 27 pF)
-
100% Avalanche Tested
-
Improved dv/dt Capability
-
RoHS Compliant
FDA20N50F Applications
-
PDP TV
-
Uninterruptible Power Supply
-
AC-DC Power Supply
-
power factor correction (PFC), flat panel display (FPD) TV power, ATX
-
electronic lamp ballasts.
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